S-passivation of the Ge gate stack: Tuning the gate stack properties by changing the atomic layer deposition oxidant precursor

S. Sioncke, H. C. Lin, L. Nyns, G. Brammertz, A. Delabie, T. Conard, A. Franquet, J. Rip, H. Struyf, S. De Gendt, M. Müller, B. Beckhoff, M. Caymax
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3622514