Highly stable amorphous In-Ga-Zn-O thin-film transistors produced by eliminating deep subgap defects

  • Kenji Nomura, Toshio Kamiya, Hideo Hosono
  • Applied Physics Letters, August 2011, American Institute of Physics
  • DOI: 10.1063/1.3622121

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http://dx.doi.org/10.1063/1.3622121

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