Enhancement-mode buried strained silicon channel quantum dot with tunable lateral geometry

T. M. Lu, N. C. Bishop, T. Pluym, J. Means, P. G. Kotula, J. Cederberg, L. A. Tracy, J. Dominguez, M. P. Lilly, M. S. Carroll
  • Applied Physics Letters, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3615288
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