Enhancement-mode buried strained silicon channel quantum dot with tunable lateral geometry

  • T. M. Lu, N. C. Bishop, T. Pluym, J. Means, P. G. Kotula, J. Cederberg, L. A. Tracy, J. Dominguez, M. P. Lilly, M. S. Carroll
  • Applied Physics Letters, July 2011, American Institute of Physics
  • DOI: 10.1063/1.3615288

The authors haven't yet claimed this publication.

Read Publication

http://dx.doi.org/10.1063/1.3615288

In partnership with: