Effects of postdeposition annealing ambient on hysteresis in an Al2O3/GeO2 gate-dielectric stack on Ge

Yukio Fukuda, Yohei Otani, Tetsuya Sato, Hiroshi Toyota, Toshiro Ono
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3610796
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