The flexible non-volatile memory devices using oxide semiconductors and ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene)

Gwang-Geun Lee, Eisuke Tokumitsu, Sung-Min Yoon, Yoshihisa Fujisaki, Joo-Won Yoon, Hiroshi Ishiwara
  • Applied Physics Letters, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3608145
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