Electron mobility enhancement in nanoscale silicon-on-insulator diffusion layers with high doping concentration of greater than 1 × 1018 cm−3 and silicon-on-insulator thickness of less than 10 nm

Naotoshi Kadotani, Tsunaki Takahashi, Teruyuki Ohashi, Shunri Oda, Ken Uchida
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3606420
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