Carrier transport in indium-doped p-channel silicon-on-insulator transistors between 30 and 285 K

M. A. H. Khalafalla, Y. Ono, J. Noborisaka, G. P. Lansbergen, A. Fujiwara
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3605546
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