Evolution of cell resistance, threshold voltage and crystallization temperature during cycling of line-cell phase-change random access memory

J. L. M. Oosthoek, K. Attenborough, G. A. M. Hurkx, F. J. Jedema, D. J. Gravesteijn, B. J. Kooi
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3603025