Influence of deep-pits on the device characteristics of metal-organic chemical vapor deposition grown AlGaN/GaN high-electron mobility transistors on silicon substrate

  • S. Lawrence Selvaraj, Arata Watanabe, Takashi Egawa
  • Applied Physics Letters, June 2011, American Institute of Physics
  • DOI: 10.1063/1.3602919

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http://dx.doi.org/10.1063/1.3602919

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