Influence of deep-pits on the device characteristics of metal-organic chemical vapor deposition grown AlGaN/GaN high-electron mobility transistors on silicon substrate

S. Lawrence Selvaraj, Arata Watanabe, Takashi Egawa
  • Applied Physics Letters, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3602919
The author haven't finished explaining this publicationThe author haven't finished explaining this publication
The following have contributed to this page: Lawrence Selvaraj