Improvement of efficiency of GaN-based polarization-doped light-emitting diodes grown by metalorganic chemical vapor deposition

L. Zhang, X. C. Wei, N. X. Liu, H. X. Lu, J. P. Zeng, J. X. Wang, Y. P. Zeng, J. M. Li
  • Applied Physics Letters, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3601469
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