High temperature (1000 °C) compatible Y–La–Si–O silicate gate dielectric in direct contact with Si with 7.7 Å equivalent oxide thickness

C. Dubourdieu, E. Cartier, J. Bruley, M. Hopstaken, M. M. Frank, V. Narayanan
  • Applied Physics Letters, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3600790