InxGa1-xSb channel p-metal-oxide-semiconductor field effect transistors: Effect of strain and heterostructure design

Aneesh Nainani, Ze Yuan, Tejas Krishnamohan, Brian R. Bennett, J. Brad Boos, Matthew Reason, Mario G. Ancona, Yoshio Nishi, Krishna C. Saraswat
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3600220