Comparison of hole traps in n-GaN grown by hydride vapor phase epitaxy, metal organic chemical vapor deposition, and epitaxial lateral overgrowth

A. Y. Polyakov, I.-H. Lee, N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, S. J. Pearton
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3599894
The author haven't yet claimed this publicationThe author haven't yet claimed this publication