Molecular‐beam‐epitaxy growth of CdTe on InSb (110) monitoredin situby Raman spectroscopy

D. Drews, J. Sahm, W. Richter, D. R. T. Zahn
  • Journal of Applied Physics, September 1995, American Institute of Physics
  • DOI: 10.1063/1.359862

The authors haven't finished explaining this publication. If you are the author, sign in to claim or explain your work.

Read Publication

http://dx.doi.org/10.1063/1.359862

The following have contributed to this page: Professor Dietrich RT Zahn