In situ synchrotron based x-ray fluorescence and scattering measurements during atomic layer deposition: Initial growth of HfO2 on Si and Ge substrates

  • K. Devloo-Casier, J. Dendooven, K. F. Ludwig, G. Lekens, J. D’Haen, C. Detavernier
  • Applied Physics Letters, June 2011, American Institute of Physics
  • DOI: 10.1063/1.3598433

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http://dx.doi.org/10.1063/1.3598433

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