Mechanisms of edge-dislocation formation in strained films of zinc blende and diamond cubic semiconductors epitaxially grown on (001)-oriented substrates

Yu. B. Bolkhovityanov, A. S. Deryabin, A. K. Gutakovskii, L. V. Sokolov
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3597903
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