High-resolution x-ray diffraction investigation of relaxation and dislocations in SiGe layers grown on (001), (011), and (111) Si substrates

A. Zhylik, A. Benediktovich, A. Ulyanenkov, H. Guerault, M. Myronov, A. Dobbie, D. R. Leadley, T. Ulyanenkova
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3597828