A simultaneous observation of dislocations in 4H-SiC epilayer and n+-substrate by using electron beam induced current

Yong-Zhao Yao, Yoshihiro Sugawara, Yukari Ishikawa, Hiroaki Saitoh, Katsunori Danno, Hiroshi Suzuki, Yoichiro Kawai, Noriyoshi Shibata
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3597784
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