De-embedding parasitic elements of GaN nanowire metal semiconductor field effect transistors by use of microwave measurements

Dazhen Gu, T. M. Wallis, P. Blanchard, Sang-Hyun Lim, A. Imtiaz, K. A. Bertness, N. A. Sanford, P. Kabos
  • Applied Physics Letters, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3597408
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