Self-aligned metal source/drain InP n-metal-oxide-semiconductor field-effect transistors using Ni–InP metallic alloy

  • SangHyeon Kim, Masafumi Yokoyama, Noriyuki Taoka, Ryo Iida, Sunghoon Lee, Ryosho Nakane, Yuji Urabe, Noriyuki Miyata, Tetsuji Yasuda, Hisashi Yamada, Noboru Fukuhara, Masahiko Hata, Mitsuru Takenaka, Shinichi Takagi
  • Applied Physics Letters, June 2011, American Institute of Physics
  • DOI: 10.1063/1.3597228

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http://dx.doi.org/10.1063/1.3597228

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