Geometrical effects on spin injection: 3D spin drift diffusion model

Juzar Thingna, Jian-Sheng Wang
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3594712

Device geometries and spin-injection

What is it about?

Spin-current injection into semiconductors is of primal importance in the emerging field of spintronics. In this article we theoretically study the effect of device shape and size on the amount of spin-current injected into the semiconductor (known as spin-injection ratio) and give hints to optimize the spin-injection ratio in conventional spin-valve geometries. Our findings could help experimentalists build optimal devices for efficient spintronic applications.

Why is it important?

We develop a novel three-dimensional spin-drift diffusion model to study the effects of device geometries on spin-injection ratio. Importantly we find that when the dimension of the device (for e.g. thickness of the semiconductor) becomes smaller than the spin-diffusion length then the spin-injection ratio is suppressed, whereas in the opposite limit the spin-injection ratio shows a saturation.

The following have contributed to this page: Juzar Thingna