Usage of antimony segregation for selective doping of Si in molecular beam epitaxy

D. V. Yurasov, M. N. Drozdov, A. V. Murel, M. V. Shaleev, N. D. Zakharov, A. V. Novikov
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3594690
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