The surface boundary conditions in GaN/AlGaN/GaN transistor heterostructures

M. Gladysiewicz, R. Kudrawiec, J. Misiewicz, G. Cywinski, M. Siekacz, P. Wolny, C. Skierbiszewski
  • Applied Physics Letters, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3592801