Solution processed Ni-doped TiO[sub 2] p-type channel in field effect transistor assembly with <10 nm thin Ba[sub 0.5]Sr[sub 0.5]TiO[sub 3] dielectric layer

Soumen Das, Jin-Hwan Kim, Yong-Kyu Park, Yoon-Bong Hahn
  • Applied Physics Letters, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3592736