Strong room-temperature optical and spin polarization in InAs/GaAs quantum dot structures

J. Beyer, I. A. Buyanova, S. Suraprapapich, C. W. Tu, W. M. Chen
  • Applied Physics Letters, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3592572

Record spin polarization in quantum dots at room temperature

What is it about?

The use of electron spins as carriers of (quantum) information is one approach to a new type of information processing, beyond silicon microelectronics. Typically experiments with electron spins need to be conducted at very low temperatures, as spin information is not stable at room temperature. We achieved initialization and detection of record high spin polarization at room temperature, demonstrating the potential for quantum dot spintronics as a successor to silicon microelectronics.

Why is it important?

The use of electron spins as carriers of (quantum) information is one approach to a new type of information processing, beyond silicon microelectronics. Typically experiments with electron spins need to be conducted at very low temperatures, as spin information is not stable at room temperature. We achieved initialization and detection of record high spin polarization at room temperature, demonstrating the potential for quantum dot spintronics as a successor to silicon microelectronics.

The following have contributed to this page: Dr Jan Beyer