A strong analogy between the dielectric breakdown of high-K gate stacks and the progressive breakdown of ultrathin oxides

Santi Tous, Ernest Y. Wu, Enrique Miranda, Jordi Suñé
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3592285
The author haven't yet claimed this publicationThe author haven't yet claimed this publication