Improvement of electroluminescent performance of n-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer

S. G. Zhang, X. W. Zhang, Z. G. Yin, J. X. Wang, J. J. Dong, Z. G. Wang, S. Qu, B. Cui, A. M. Wowchak, A. M. Dabiran, P. P. Chow
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3590399