On the calculation of effective electric field in In[sub 0.53]Ga[sub 0.47]As surface channel metal-oxide-semiconductor field-effect-transistors

A. M. Sonnet, R. V. Galatage, P. K. Hurley, E. Pelucchi, K. K. Thomas, A. Gocalinska, J. Huang, N. Goel, G. Bersuker, W. P. Kirk, C. L. Hinkle, R. M. Wallace, E. M. Vogel
  • Applied Physics Letters, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3588255
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The following have contributed to this page: Christopher Hinkle and Emanuele Pelucchi