Annealing behavior of the EB-centers and M-center in low-energy electron irradiated n-type 4H-SiC

F. C. Beyer, C. Hemmingsson, H. Pedersen, A. Henry, E. Janzén, J. Isoya, N. Morishita, T. Ohshima
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3586042