Comparison between chemical vapor deposited and physical vapor deposited WSi2 metal gate for InGaAs n-metal-oxide-semiconductor field-effect transistors

  • B. S. Ong, K. L. Pey, C. Y. Ong, C. S. Tan, D. A. Antoniadis, E. A. Fitzgerald
  • Applied Physics Letters, May 2011, American Institute of Physics
  • DOI: 10.1063/1.3584024

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