Evolution and ripening of Ge crystals grown by nanoscale induced lateral epitaxy on localized oxide

V. Yam, V. D. Cammilleri, F. Fossard, C. Renard, L. Vincent, P. F. Fazzini, D. Bouchier
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3583579