Modeling of {311} facets using a lattice kinetic Monte Carlo three-dimensional model for selective epitaxial growth of silicon

  • Ignacio Martin-Bragado, Victor Moroz
  • Applied Physics Letters, April 2011, American Institute of Physics
  • DOI: 10.1063/1.3580771

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http://dx.doi.org/10.1063/1.3580771

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