Effects of ultra-low Al alloying In(Al)As layer on the formation and evolution of InAs/GaAs quantum dots

X. L. Zhou, Y. H. Chen, T. F. Li, G. Y. Zhou, H. Y. Zhang, X. L. Ye, Bo Xu, Z. G. Wang
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3580258