Dependence of crystal orientation and bandgap on substrate temperature of molecular-beam epitaxy grown InN on bare Al2O3 (0001)

Jithesh Kuyyalil, Malleswararao Tangi, S. M. Shivaprasad
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3580254
The author haven't yet claimed this publicationThe author haven't yet claimed this publication