Al[sub 0.44]Ga[sub 0.56]N spacer layer to prevent electron accumulation inside barriers in lattice-matched InAlN/AlGaN/AlN/GaN heterostructures

M. Akazawa, B. Gao, T. Hashizume, M. Hiroki, S. Yamahata, N. Shigekawa
  • Applied Physics Letters, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3578449
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