Interface model for HfO2 gate stack from first principles calculations and its application to nanoscale device simulations

  • Mincheol Shin, Yongjin Park, Ki-jeong Kong, Hyunju Chang
  • Applied Physics Letters, April 2011, American Institute of Physics
  • DOI: 10.1063/1.3575570

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http://dx.doi.org/10.1063/1.3575570

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