Al-doped HfO[sub 2]/In[sub 0.53]Ga[sub 0.47]As metal-oxide-semiconductor capacitors

Yoontae Hwang, Varistha Chobpattana, Jack Y. Zhang, James M. LeBeau, Roman Engel-Herbert, Susanne Stemmer
  • Applied Physics Letters, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3575569
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