Contribution of carrier tunneling and gate induced drain leakage effects to the gate and drain currents of fin–shaped field–effect transistors

S. I. Garduño, A. Cerdeira, M. Estrada, J. Alvarado, V. Kilchytska, D. Flandre
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3575324