Selective epitaxial growth of Ge/Si0.15Ge0.85 quantum wells on Si substrate using reduced pressure chemical vapor deposition

  • Theodore I. Kamins, James S. Harris, David A. B. Miller
  • Applied Physics Letters, April 2011, American Institute of Physics
  • DOI: 10.1063/1.3574912

The authors haven't yet claimed this publication.

Read Publication

http://dx.doi.org/10.1063/1.3574912

In partnership with: