Direct observation of N-(group V) bonding defects in dilute nitride semiconductors using hard x-ray photoelectron spectroscopy

F. Ishikawa, S. Fuyuno, K. Higashi, M. Kondow, M. Machida, H. Oji, J.-Y. Son, A. Trampert, K. Umeno, Y. Furukawa, A. Wakahara
  • Applied Physics Letters, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3573789
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