Effect of surface preparation and interfacial layer on the quality of SiO2/GaN interfaces

E. Al Alam, I. Cortés, M.-P. Besland, A. Goullet, L. Lajaunie, P. Regreny, Y. Cordier, J. Brault, A. Cazarré, K. Isoird, G. Sarrabayrouse, F. Morancho
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3572236
The author haven't yet claimed this publicationThe author haven't yet claimed this publication