Effect of channel thickness on density of states in amorphous InGaZnO thin film transistor

  • Sang Yeol Lee, Do Hyung Kim, Eugene Chong, Yong Woo Jeon, Dae Hwan Kim
  • Applied Physics Letters, March 2011, American Institute of Physics
  • DOI: 10.1063/1.3570641

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http://dx.doi.org/10.1063/1.3570641

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