Influence of indium composition in the prestrained InGaN interlayer on the strain relaxation of InGaN/GaN multiple quantum wells in laser diode structures

Lei Liu, Lei Wang, Ding Li, Ningyang Liu, Lei Li, Wenyu Cao, Wei Yang, Chenghao Wan, Weihua Chen, Weimin Du, Xiaodong Hu, Zhe Chuan Feng
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3569848
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