Characterization of the gate oxide of an AlGaN/GaN high electron mobility transistor

M. R. Holzworth, N. G. Rudawski, S. J. Pearton, K. S. Jones, L. Lu, T. S. Kang, F. Ren, J. W. Johnson
  • Applied Physics Letters, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3569715
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