Gate- and drain-lag effects in (Mg,Zn)O-based metal-semiconductor field-effect transistors

F. J. Klüpfel, A. Lajn, H. Frenzel, H. von Wenckstern, M. Grundmann
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3569628