GaSb molecular beam epitaxial growth on p-InP(001) and passivation with in situ deposited Al2O3 gate oxide

C. Merckling, X. Sun, A. Alian, G. Brammertz, V. V. Afanas’ev, T. Y. Hoffmann, M. Heyns, M. Caymax, J. Dekoster
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3569618
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The following have contributed to this page: Guy Brammertz