Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics

Yuanjie Lv, Zhaojun Lin, Timothy D. Corrigan, Jianzhi Zhao, Zhifang Cao, Lingguo Meng, Chongbiao Luan, Zhanguo Wang, Hong Chen
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3569594