Publisher’s Note: “Attainment of low interfacial trap density absent of a large midgap peak in In[sub 0.2]Ga[sub 0.8]As by Ga[sub 2]O[sub 3] (Gd[sub 2]O[sub 3]) passivation” [Appl. Phys. Lett. 98, 062108 (2011)]

C. A. Lin, H. C. Chiu, T. H. Chiang, T. D. Lin, Y. H. Chang, W. H. Chang, Y. C. Chang, W.-E. Wang, J. Dekoster, T. Y. Hoffmann, M. Hong, J. Kwo
  • Applied Physics Letters, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3566014
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