Impact of ultrathin Al2O3 barrier layer on electrical properties of LaLuO3 metal-oxide-semiconductor devices

  • Yiqun Liu, Shaoping Shen, Leonard J. Brillson, Roy G. Gordon
  • Applied Physics Letters, March 2011, American Institute of Physics
  • DOI: 10.1063/1.3563713

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http://dx.doi.org/10.1063/1.3563713

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