Boron-Silicon complex defects in GaAs: An ab initio study

R. Leitsmann, F. Chicker, Ph. Plänitz, C. Radehaus, U. Kretzer, M. Scheffer-Czygan, S. Eichler
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3561373